Aalto University-ko ikertzaileekin lankidetzan egindako argitalpenak (21)

2017

  1. Radiation-induced alloy rearrangement in InxGa1−xN

    Applied Physics Letters, Vol. 110, Núm. 13

2013

  1. On the interplay of point defects and Cd in non-polar ZnCdO films

    Journal of Applied Physics, Vol. 113, Núm. 2

2010

  1. Temperature- and illumination-induced charge-state change in divacancies of GaTe

    Physical Review B - Condensed Matter and Materials Physics, Vol. 81, Núm. 19

2007

  1. New method for the determination of the defect profile in thin layers grown over a substrate

    Physica Status Solidi (C) Current Topics in Solid State Physics

  2. Positron annihilation lifetime spectroscopy of ZnO bulk samples

    Physical Review B - Condensed Matter and Materials Physics, Vol. 76, Núm. 8

  3. Positron annihilation spectroscopy for the determination of thickness and defect profile in thin semiconductor layers

    Physical Review B - Condensed Matter and Materials Physics, Vol. 75, Núm. 20

1998

  1. Positron lifetime calculations of hexagonal metals with the true geometry

    Physica Status Solidi (B) Basic Research, Vol. 206, Núm. 2, pp. 509-518

1986

  1. Detection of Ga vacancies in electron irradiated GaAs by positrons

    Applied Physics Letters Applied Physics Letters, Vol. 48, Núm. 12, pp. 809-810

  2. POSITRON STUDY OF NATIVE VACANCIES IN DOPED AND UNDOPED GAAS

    JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, Vol. 19, Núm. 3, pp. 331-344

  3. Study of formation and reversion of Guinier-Preston zones in Al-4.5 at%Zn-x at%Mg alloys by positrons

    Journal of Materials Science, Vol. 21, Núm. 3, pp. 853-858

1985

  1. Positron-trapping mechanism at grain boundaries

    Physical Review B, Vol. 31, Núm. 11, pp. 6941-6946

  2. Vacancy-zn complexes in inp studied by positrons

    Applied Physics Letters, Vol. 46, Núm. 12, pp. 1136-1138