Recombination processes in unintentionally doped GaTe single crystals

  1. Zubiaga, A.
  2. García, J.A.
  3. Plazaola, F.
  4. Muñoz-Sanjosé, V.
  5. Martínez-Tomás, M.C.
Journal:
Journal of Applied Physics

ISSN: 0021-8979

Year of publication: 2002

Volume: 92

Issue: 12

Pages: 7330-7336

Type: Article

DOI: 10.1063/1.1523144 GOOGLE SCHOLAR

Sustainable development goals

Data source: Scopus